Figure 8
RHEED patterns and STM images of Si:H surfaces obtained as a result of different chemical treatments: a-c after hydrogenation in dilute HF; d-f after hydrogenation in buffered HF + NH4F; RHEED patterns: E = 10 keV, a, d [110] azimuth, b, e [010] azimuth; STM empty-state images: c 100 × 100 nm, U s = +1.9 V, I t = 100 pA; f 88 × 88 nm, U s = +2.0 V, I t = 100 pA.