Skip to main content
Account
Figure 9 | Nanoscale Research Letters

Figure 9

From: Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Figure 9

STM images and RHEED patterns of Si:H surfaces obtained as a result of hydrogenation in dilute HF after different heat treatments: a, b, e-h STM empty-state images; a 650°C for 8 min, 57 × 57 nm; b 610°C for 10 min, 41 × 41 nm; c, d corresponding RHEED patterns, E = 10 keV: c [110], d [010]; e 570°C for 20 min, 101 × 101 nm; f 550°C for 30 min, 66 × 66 nm; g 530°C for 35 min, 41 × 41 nm; h 500°C for 35 min, 49 × 49 nm; i, j corresponding RHEED patterns, E = 10 keV: i [110], j [010].

Back to article page

Navigation