Figure 5
From: Tuning the electronic transport properties of graphene through functionalisation with fluorine
Electronic transport in fluorinated multi-layer graphene. (a) Resistivity as a function of gate voltage for an annealed fully fluorinated device. (a) Resistivity for the fully fluorinated device plotted against T -1 and T -1/3 at V g = +50 V. (c) I-V characteristics for multi-layer fluorinated graphene exfoliated from CF0.28 graphite. (d) Resistivity of fluorinated multi-layer graphene (exfoliated from CF0.28) plotted as a function of T -x, where x = 1 for thermally activated transport, x = 1/2 for Efros-Shklovskii VRH and x = 1/3 for 2D Mott VRH.