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Figure 1 | Nanoscale Research Letters

Figure 1

From: Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

Figure 1

The two-terminal magnetoresistance at base temperature (T≈50 mK) for aluminium and nickel silicide contact metallizations to the Si:P δ -layers. Figure 1a shows a small peak resulting from weak localization within the δ-layer, and can be fitted with the Hikami model as shown. Figure 1b shows the large resistance peak around B = 0 that results from the formation of the BCS energy gap in the superconducting aluminium contacts. The critical field B C = 10.5 mT for aluminium is shown, which coincides with the destruction of the resistance peak.

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