Figure 2From: Nano-structure fabrication of GaAs using AFM tip-induced local oxidation method: different doping types and plane orientations An AFM images displaying the oxide lines. Formed at (a) p-type GaAs(100), (b) n-type GaAs(100), (c) p-type GaAs(711), and (d) n-type GaAs(711) with varying loading forces of 60, 120, and 180 nN and applying tip voltage of 5 V.Back to article page