Figure 5From: Nano-structure fabrication of GaAs using AFM tip-induced local oxidation method: different doping types and plane orientations Contoured image of electric field between AFM probe and GaAs surface at different penetration depth. (a) 0.5 nm, (b) 1.0 nm, (c) 2.0 nm, and (d) the electric field profile along the horizontal cross-sectional lines for different depth conditions.Back to article page