Figure 2From: Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy Raman spectra of carbon films. The films were grown (a) at 900°C on amorphous TiO2 and (b) at 900°C on amorphous Ta2O5. No carbon-related peaks are observed. The peak near 1,000 cm−1 is from Si substrate.Back to article page