Figure 5From: Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask Schematic descriptions of test device structures for I - V measurement. (a) a reference device structure with an active region using bare-Siand (b) comparing device structure with an active region using ICP-etched Si with MWCNT dispersion in HMDS. Except the last P-Si layer, everything else is fabricated to be the same.Back to article page