Figure 3From: STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs STEM-HAADF micrograph and EDS analysis of the non-stressed emitter finger. (a) The red dotted line represents the EDS line scan. (b) EDS line scan showing the elemental composition along the longitudinal section of the emitter contact before stress. Yellow head arrows delimit dark zone.Back to article page