Figure 1From: Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics SEM images of SiNWs of different lengths. Plane-view (a 1 , b 1 ) and cross-sectional (a 2 , b 2 ) SEM images of SiNWs of two different lengths: 5 μm (a1, a2) and 20 μm (b1, b2). It is depicted that short NWs are well separated between them, while longer NWs merge together and form bundles.Back to article page