Figure 5From: Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes I-V asymmetry dependence with an AlAs barrier thickness of 1.6 ~ 2.73 nm. I-V asymmetry dependence with an AlAs barrier thickness of 1.6 ~ 2.73 nm and an interruption time of 40 s at the AlAs/In0.53Ga0.47As interfaces.Back to article page