Table 1 Structural parameters of the GaN/AlN QD samples and the measured morphology characteristics
From: Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
Sample | AlN spacer thickness (nm) | GaN insertion layer thickness (nm) | QD density (cm-2) | Mean QD height (nm) | Mean QD diameter (nm) | QD AR |
|---|---|---|---|---|---|---|
A | N/A | None | 4.4 × 1011 | 1.1 | 10.2 | 0.11 |
B | 60 | 100 | 4.0 × 1011 | 1.5 | 10.5 | 0.14 |
C | 40 | 100 | 2.2 × 1011 | 1.9 | 11.8 | 0.16 |
D | 20 | 100 | 9.6 × 1010 | 2.9 | 17.2 | 0.17 |