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Figure 4 | Nanoscale Research Letters

Figure 4

From: Analysis of optical absorption in GaAs nanowire arrays

Figure 4

Simulated absorptance of GaAs NWAs with optimized structure ( D/P = 0.5, D = 180 nm). The absorptance was taken under oblique incident illumination at wavelength λ = 800 nm for different incident angles. The inset shows the schematic drawing of a single nanowire under oblique incident illumination together with definitions of TE and TM illumination.

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