From: Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
C xx (Gpa)
C xy (Gpa)
C xz (Gpa)
C zz (Gpa)
References
GaN
374
106
70
379
[26]
Al2O3
409.2
165.4
113.0
490.2
[27]