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Table 1 Results of the facet analysis for SiGe island formed at high temperatures, listing all experimentally observed {hkl} island facets with the corresponding experimental and theoretical values θ and φ as well as the facet area relative to {111}.

From: Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands

Facet

θ th(°)

θ exp(°)

φ th(°)

φ exp(°)

Also occurs for

Facet area relative to {111} (%)

{105}

    

P, D, B

 

{5 3 15}

21.2

21.8 ± 0.1

30.1

29.1 ± 0.3

*

21 ± 1

{113}

25.2

25.1 ± 0.1

45.0

45.0 ± 0.2

D, B

77 ± 4

{15 3 23}

33.6

33.9 ± 0.1

11.3

11.6 ± 0.1

D, B

44 ± 2

{558}

41.5

41.6 ± 0.5

45.0

44.9 ± 0.4

*

19 ± 1

{20 4 23}

41.7

40.7 ± 0.1

11.3

11.6 ± 0.2

B

35 ± 2

{313}

46.5

46.6 ± 0.2

18.4

17.4 ± 0.2

*

29 ± 1

{23 4 20}

49.4

49.3 ± 0.2

9.9

10.4 ± 0.2

B

23 ± 12

{715}

54.7

54.7 ± 0.2

8.1

8.2 ± 0.1

*

62 ± 3

{111}

54.7

54.7 ± 0.1

45.0

45.0 ± 0.1

B

100 ± 7

{322}

61.0

61.7 ± 0.6

33.7

33.0 ± 0.3

*

32 ± 2

{12 3 5}

68.0

67.4 ± 0.4

14.0

14.7 ± 0.2

*

53 ± 2

  1. * New facets

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