Skip to main content

Table 1 Results of the facet analysis for SiGe island formed at high temperatures, listing all experimentally observed {hkl} island facets with the corresponding experimental and theoretical values θ and φ as well as the facet area relative to {111}.

From: Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands

Facet θ th(°) θ exp(°) φ th(°) φ exp(°) Also occurs for Facet area relative to {111} (%)
{105}      P, D, B  
{5 3 15} 21.2 21.8 ± 0.1 30.1 29.1 ± 0.3 * 21 ± 1
{113} 25.2 25.1 ± 0.1 45.0 45.0 ± 0.2 D, B 77 ± 4
{15 3 23} 33.6 33.9 ± 0.1 11.3 11.6 ± 0.1 D, B 44 ± 2
{558} 41.5 41.6 ± 0.5 45.0 44.9 ± 0.4 * 19 ± 1
{20 4 23} 41.7 40.7 ± 0.1 11.3 11.6 ± 0.2 B 35 ± 2
{313} 46.5 46.6 ± 0.2 18.4 17.4 ± 0.2 * 29 ± 1
{23 4 20} 49.4 49.3 ± 0.2 9.9 10.4 ± 0.2 B 23 ± 12
{715} 54.7 54.7 ± 0.2 8.1 8.2 ± 0.1 * 62 ± 3
{111} 54.7 54.7 ± 0.1 45.0 45.0 ± 0.1 B 100 ± 7
{322} 61.0 61.7 ± 0.6 33.7 33.0 ± 0.3 * 32 ± 2
{12 3 5} 68.0 67.4 ± 0.4 14.0 14.7 ± 0.2 * 53 ± 2
  1. * New facets