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Table 1 Layer structures for samples without and with AlAs capping

From: Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

Without AlAs capping		With AlAs capping
100 nm p-GaAs		100 nm p-GaAs
20 nm i-GaAs		20 nm i-GaAs
6.6 nm i-InGaAs		6.6 nm i-InGaAs
InAs QDs	10×	0.283 nm AlAs	10×
		InAs QDs
20 nm i-GaAs		20 nm i-GaAs
1 μm n-GaAs buffer		1 μm n-GaAs buffer
n-GaAs substrate		n-GaAs substrate

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