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Table 1 Layer structures for samples without and with AlAs capping

From: Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

Without AlAs capping With AlAs capping
100 nm p-GaAs   100 nm p-GaAs  
20 nm i-GaAs   20 nm i-GaAs  
6.6 nm i-InGaAs   6.6 nm i-InGaAs  
InAs QDs 10× 0.283 nm AlAs 10×
   InAs QDs  
20 nm i-GaAs   20 nm i-GaAs  
1 μm n-GaAs buffer   1 μm n-GaAs buffer  
n-GaAs substrate   n-GaAs substrate