Figure 3From: Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy (a) STM image (200 × 200 nm 2 ) from the Ge 0.96 Sn 0.04 film with 1.08 nm thickness, grown at 250°C. (b) The dependence of quantity ND on the lateral size.Back to article page