Figure 4From: Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy (a) AFM image (1 × 1 μm 2 ) from the Ge 0.96 Sn 0.04 film with 1.58 nm thickness, grown at 350°C. (b) The dependence of quantity ND on the lateral size.Back to article page