Figure 1From: Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrateSEM images of In 0.8 Ga 0.2 As SAQDs on GaAs buffer layers were formed on SiO 2 -patterned exact (001) GaAs substrate with W 0 of (a) 275 and (b) 630 nm, respectively. SEM images of In0.8Ga0.2As SAQDs on GaAs buffer layers were formed on SiO2-patterned 5°-off (001) with W0 of (c) 285 and (d) 730 nm, respectively.Back to article page