Figure 4From: Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrateμ-PL spectra of an In 0.8 Ga 0.2 As SAQDs ensemble grown on SiO 2 -patterned 5°-off (001) GaAs substrate with the excitation power of He-Ne laser were (a) 0.4, (b) 2, (c) 3.17, and (d) 4 meV, respectively. (W(001):150 nm).Back to article page