Figure 5From: Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrateCross sectional SEM image of the GaAs layer on SiO 2 -patterned 5°-off (001) GaAs substrate, when W 0 was 655 nm. The front direction of GaAs layer was rotated about 30° from [ 1 1 ̄ 0 ] direction.Back to article page