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Figure 7 | Nanoscale Research Letters

Figure 7

From: Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT

Figure 7

Spectral analysis. The EDS spectra analysis for (a) sample 1: Ti/Al/Ti/Au; (b) sample 2: Ti/Al/Ni/Au; (c) sample 3: Ti/Al/Ta/Au; and (d) sample 4: the optimized Ti/Al/Ta/Au after annealing at 850°C for 30 s (the FIB image of the cross-sectional ohmic contact with the EDS spectra measuring point is shown in the upper left of (a), and the distance from the AlGaN/GaN layers to the alloyed ohmic contact surface is 80 nm, which is fixed to all of the measured samples).

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