Figure 8From: Fabrication, characterization, and kinetic study of vertical single-crystalline CuO nanowires on Si substratesI - V characteristics and the average electrical resistance of the CuO nanowire sample. (a) I-V characteristics of the CuO nanowire sample measured at different environmental temperatures. The inset shows a schematic illustration of CuO nanowire device configuration. (b) The average electrical resistance of the CuO nanowire sample as a function of environmental temperature.Back to article page