Figure 5
From: SiO x /SiN y multilayers for photovoltaic and photonic applications
PL intensity with annealing time and temperature. Evolution of the Nd3+ PL intensity at 1.37 eV for doped SiO x /SiN y MLs with annealing temperature and time. (Inset) PL spectra of as-grown Nd3+-doped SiO x /SiN y and SiO x /SiO2 MLs with equal number of periods. The thicknesses of the SiO x , SiO2, and SiN y sublayers are 3.5, 5.0, and 5.0 nm, respectively.