Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

Table 1 Simulated result of RMS roughness of every layer of RTD-1, RTD-2, and RTD-3

		AlAs DBL	InGaAs-strained layer	InAs QDs layer	InGaAs capping layer	AlAs UBL
RMS (nm)	RTD-1	0.15	0.19			0.31
	RTD-2	0.18	0.14	6.05	0.28	0.76
	RTD-3	0.17	0.15	4.62	0.17	0.18

DBL, down barrier layer; QD, quantum dot, UBL, up barrier layer; RMS, root mean square, RTD, resonant tunneling diode.