Figure 5From: Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etchingSEM images of SiGe NRs etched at a solution temperature at various times. SEM images of SiGe NRs etched at solution temperature of 25°C for (a) 5, (b) 10, (c) 15, and (d) 20 min.Back to article page