Table 4 Details of memory window and charge retention characteristics of different Ge NCs memory devices
From: Optical and electrical properties of undoped and doped Ge nanocrystals
Sample | ΔVFB at t= 0 (V) | Charge storage (cm-2) | ΔVFB after 10 years (V) | Charge loss after 10 years (%) |
---|---|---|---|---|
'RS-2' | 0.55 | 3.2 × 1010 | 0.29 | 47 |
'RA' | 3.98 | 7.6 × 1012 | 2.67 | 33 |
'RF' | 4.66 | 1.6 × 1013 | 2.91 | 37 |
'RFS' | 5.88 | 2.1 × 1013 | 4.94 | 16 |