Figure 7
From: Fabrication mechanism of friction-induced selective etching on Si(100) surface
Fabrication of nanopatterns on Si(100) surface by friction-induced selective etching technique. (a) Protrusive array of nanolines by line scratch under Fn = 2 mN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (b) Protrusive array of nano-mesas produced by scanning scratch under Fn = 15 μN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (c) Nano-ring produced by scanning scratch under Fn = 20 μN and post-etching in 20 wt.% KOH + IPA solution for 2 min. (d) Nanoword TRI produced by scanning scratch under Fn = 20 μN and post-etching in 20 wt.% KOH + IPA solution for 1 min. The native oxidation layer on the Si(100) surface was removed by HF etching before scratching.