Figure 3
From: Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
Electrical transport characteristics of the transistors. Patterns a, b, c, d, and e refer to current-voltage (Isd-Vds) characteristics measured at different gate voltages V g , at room temperature for samples a, b, c, d, and e, respectively; Patterns f, g, h, i, and l refer to Isd-Vg transfer characteristic measured for samples a, b, c, d, and e at room temperature and at a drain-to-source voltage Vds = 0.025 V.