Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

Table 1 Samples

Sample	Metal organic line pressure (Torr)	Nanowire diameter (nm)	Gate-to-nanowire distance (nm)	Gate length (nm)	Source-to-drain distance (nm)
a	0	29	120	750	1,200
b	0.05	33	140	700	1,200
c	0.1	39	140	750	1,250
d	0.2	40	160	870	1,400
e	0.4	80	140	1,700	2,500

Average geometrical values for FET devices based on InAs nanowires having different diameters and grown under different DtBSe precursor line pressures. The NW diameters have been measured at the center of the NW axis.