Figure 3From: Tailoring of Seebeck coefficient with surface roughness effects in silicon sub-50-nm filmsCurrent-voltage characteristics for the 2D Si structure. L c = 10 nm, T b = 2 nm, transport mass m x = 0.19 m0, quantization mass m z = 0.91 m0 and ΔT = 20 K. For (a) λ = 2.5 nm &A0's = 0.1 nm, 0.3 nm, 0.5 nm and for (b) A0 = 0.5 nm &λ's = 2.5 nm, 3.3 nm, 5 nm. Also in (a) I-V characteristics for smooth surface is shown for comparison.Back to article page