Current-voltage characteristics for the 2D Si structure. L
= 10 nm, T
= 2 nm, transport mass m
= 0.19 m0, quantization mass m
= 0.91 m0 and ΔT = 20 K. For (a) λ = 2.5 nm &A0's = 0.1 nm, 0.3 nm, 0.5 nm and for (b) A0 = 0.5 nm &λ's = 2.5 nm, 3.3 nm, 5 nm. Also in (a) I-V characteristics for smooth surface is shown for comparison.