Figure 6
From: Tailoring of Seebeck coefficient with surface roughness effects in silicon sub-50-nm films
Energy resolved transmission, Fermi Dirac occupancy and current for λ = 2.5 nm and 3.3 nm with A 0 = 0.5 nm. Energy resolved transmission is shown in (a, d), difference in the Fermi Dirac occupancy of cold and hot ends is shown in (b, e) and current is shown in (c, f). For (a-c) λ = 2.5 nm and for (d-f) λ = 3.3 nm. Enull shifts towards higher energy sides with decreasing wavelength.