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Figure 7 | Nanoscale Research Letters

Figure 7

From: Gadolinium oxide nanocrystal nonvolatile memory with HfO2/Al2O3 nanostructure tunneling layers

Figure 7

The band diagrams of Gd 2 O 3 -NC memories with nanostructure at (a) retention and (b) programming states. The bandgaps of HfO2 and Al2O3 are assumed to be 6.1 and 8.7 eV, respectively [22, 23]. The charge loss paths of shallow traps and deep traps are pointed out by arrow signs in (a); the charge injection paths when applying gate voltage is drawn by arrow signs in (b).

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