Figure 7
From: Gadolinium oxide nanocrystal nonvolatile memory with HfO2/Al2O3 nanostructure tunneling layers
The band diagrams of Gd 2 O 3 -NC memories with nanostructure at (a) retention and (b) programming states. The bandgaps of HfO2 and Al2O3 are assumed to be 6.1 and 8.7 eV, respectively [22, 23]. The charge loss paths of shallow traps and deep traps are pointed out by arrow signs in (a); the charge injection paths when applying gate voltage is drawn by arrow signs in (b).