Figure 1From: Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin filmsBipolar current-voltage switching characteristic. Typical bipolar current-voltage switching characteristic in the Pt/ZnO/Pt structure with area of 1.27 × 10-3 cm2. The current compliance of 3 mA is set to prevent the permanent breakdown of the cells during the set process.Back to article page