Figure 5
From: SiC surface orientation and Si loss rate effects on epitaxial graphene

Transistor transfer characteristics. In the Si-face-down orientaion graphene (a) and C-face-down orientation graphene, gate length/width = 10 um/10 um (b).
From: SiC surface orientation and Si loss rate effects on epitaxial graphene
Transistor transfer characteristics. In the Si-face-down orientaion graphene (a) and C-face-down orientation graphene, gate length/width = 10 um/10 um (b).