Figure 4From: Effect of non-lattice oxygen on ZrO2-based resistive switching memoryXPS spectra of the ZrO 2 films deposited at various temperatures. (a) Zr 3d and (b) O 1s XPS spectra of the ZrO2 films deposited at RT, 150°C, 200°C, 250°C, and 300°C. The ZrO2 film deposited at RT possesses the highest content of the non-lattice oxygen.Back to article page