Figure 7From: Effect of non-lattice oxygen on ZrO2-based resistive switching memoryRetention time of the sample fabricated at RT. LRS and HRS currents measured at ± 0.1 V firmly hold on about 6 mA and 2 × 10-8 A, respectively, for over 106 s without applying any power supply, so the good nonvolatility of the sample is demonstrated.Back to article page