Figure 3From: Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsTypical hysteresis characteristics of the IrO x -ND MIS capacitors and V FB shift with sweeping gate voltages. (a) Typical C-V hysteresis characteristics of the IrOx-ND MIS capacitors and (b) VFB shift with sweeping gate voltages for the IrOx-ND and pure Al2O3 charge-trapping devices.Back to article page