Figure 5From: Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsXPS of Ir 4f electrons from the IrO x -NDs and W 4f core-level electrons in the WO x layer. (a) XPS of the Ir4f electrons from the IrOx-NDs and (b) W4f core-level electrons in the WOx layer.Back to article page