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Figure 1 | Nanoscale Research Letters

Figure 1

From: Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

Figure 1

Typical electrical transport properties of the single CdS NB MESFETs. (a) The current–voltage (I-V) curve measured between the source and drain electrodes. Inset: a typical FESEM image of a single CdS NB MESFET-based photodetector. (b) The red straight line shows the fitting result with the equation ln I = q V n k T + ln I 0 where I 0 is the reverse saturation current, q is the electronic charge, V is the applied bias, n is the diode ideality factor, k is the Bolzmann constant, and T is the absolute temperature.

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