Figure 1

Typical electrical transport properties of the single CdS NB MESFETs. (a) The current–voltage (I-V) curve measured between the source and drain electrodes. Inset: a typical FESEM image of a single CdS NB MESFET-based photodetector. (b) The red straight line shows the fitting result with the equation $\text{ln}\left(I\right)=\frac{qV}{nkT}+\text{ln}\left(I_0\right)$ where I ₀ is the reverse saturation current, q is the electronic charge, V is the applied bias, n is the diode ideality factor, k is the Bolzmann constant, and T is the absolute temperature.