Table 1 Comparison of the key parameters for the CdS NB (NW) photodetectors with different structures
From: Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)
Materials | Structure | Rise; fall time | Responsivity (A/W) | Ilight/Idark | Reference |
|---|---|---|---|---|---|
CdS NB | Ohmic contact | 746; 794 μs | approximately 38 | 6.0 × 103 | [9] |
CdS NB | Ohmic contact | approximately 20; approximately 20 μs | 7.3 × 104 | 6.0 | [15] |
CdS NW | Schottky contact | -; 320 ms | - | approximately 183.0 | [17] |
CdS NB | MESFET | 137; 379 μs | approximately 2.0 × 102 | approximately 2.7 × 106 | This work |