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Table 1 Comparison of the key parameters for the CdS NB (NW) photodetectors with different structures

From: Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

Materials Structure Rise; fall time Responsivity (A/W) Ilight/Idark Reference
CdS NB Ohmic contact 746; 794 μs approximately
38
6.0 × 103 [9]
CdS NB Ohmic contact approximately 20; approximately 20 μs 7.3 × 104 6.0 [15]
CdS NW Schottky contact -; 320 ms - approximately 183.0 [17]
CdS NB MESFET 137; 379 μs approximately 2.0 × 102 approximately 2.7 × 106 This work