Table 1 Relationship of dielectric properties with substrate type and thickness of BaTiO 3 films (at 1 MHz)
Film thickness (μm) | ~0.1 | 0.2 | 0.4 | 0.5 | 0.8 | 1.0~ | |
|---|---|---|---|---|---|---|---|
Cu substrate | ϵ r | N/A | N/A | N/A | 60 | 69 | >71 |
tan δ (%) | N/A | N/A | N/A | 1.9 | 1.7 | <1 | |
Capacitance density (nF/cm2) | N/A | N/A | N/A | 106 | 76 | 63< | |
Dielectric behavior (%) | 0 | 0 | 0 | 50 to 80 | 50 to 80 | 90 to 100 | |
SUS substrate | ϵ r | N/A | 59 | 63 | 61 | 60 | >65 |
tan δ (%) | N/A | 2.1 | 1.9 | 1.7 | 2.3 | <1.5 | |
Capacitance density (nF/cm2) | N/A | 261 | 139 | 108 | 66 | <50 | |
Dielectric behavior (%) | 0 | 90 to 100 | 90 to 100 | 90 to 100 | 90 to 100 | 90 to 100 | |