Figure 1From: Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dotsHydrostatic strain distribution. The trace of the strain tensor distribution for InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as a function of substrate orientation. Upper row shows lateral (in-plane) projection through quantum dot center, while lower row projection was calculated for perpendicular [11 0] plane.Back to article page