Figure 2From: Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dotsDifferent functions of strain at the geometric dot center. (a) The hydrostatic strain Tr(ε)= ε xx + ε yy + ε zz , (b) the biaxial B(ε)= ε x − ε y ) 2 + ( ε y − ε z ) 2 + ( ε z − ε y ) 2 and the average shear strain S(ε)= ε xy + ε yz + ε zy /3 of InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as a function of substrate orientation.Back to article page