Figure 3From: Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dotsLateral (in-plane) projection through quantum dot center for two functions of strain. The biaxial strain B(ε)= ε x − ε y ) 2 + ( ε y − ε z ) 2 + ( ε z − ε y ) 2 (upper row) and the average shear strain S(ε)= ε xy + ε yz + ε zy /3 (lower row) of the InAs/InP nanowire quantum dot (h = 2.4 nm, d = 18 nm) as functions of substrate orientation.Back to article page