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Figure 5 | Nanoscale Research Letters

Figure 5

From: Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dots

Figure 5

Coulomb intervals and binding energies. (a) Electron-electron J ss ee , electron-hole J ss eh and hole-hole J ss hh Coulomb integrals for electron and hole occupying their ground s states of InAs/InP nanowire quantum dot (h=2.4 nm, d=18 nm) as functions of substrate orientation. (b) Biexciton (XX) and trion (X,X +) binding energies calculated by perturbative approach (Hartree-Fock approximation). (c) Biexciton (XX) and trion (X, X+ ) binding energies calculated by configuration interaction approach (including Coulomb scattering terms up to the d shell). EHF, binding energy by Hartree-Fock approximation; ECI, binding energy by configuration interaction approach.

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