Figure 5From: Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dotsCoulomb intervals and binding energies. (a) Electron-electron J ss ee , electron-hole J ss eh and hole-hole J ss hh Coulomb integrals for electron and hole occupying their ground s states of InAs/InP nanowire quantum dot (h=2.4 nm, d=18 nm) as functions of substrate orientation. (b) Biexciton (XX) and trion (X−,X +) binding energies calculated by perturbative approach (Hartree-Fock approximation). (c) Biexciton (XX) and trion (X−, X+ ) binding energies calculated by configuration interaction approach (including Coulomb scattering terms up to the d shell). EHF, binding energy by Hartree-Fock approximation; ECI, binding energy by configuration interaction approach.Back to article page