Skip to main content
SpringerLink
Account
Figure 1 | Nanoscale Research Letters

Figure 1

From: Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy

Figure 1

Tapping mode AFM images of four samples. (a) Single layer/low dot-density sample A, (b) bilayer/low dot-density sample B, (c) single layer/high dot-density sample C, and (d) bilayer/high dot- density sample D. All samples have two types of QDs, and the average sizes of both large and small QDs of the low dot-density samples (A and B) are larger than those of the high dot-density samples (C and D), respectively.

Back to article page

Search

Navigation