Figure 6From: Ferroelectric memory based on nanostructuresMemory characteristics ZnO NW FeFET device. (a) IDS-VG transfer characteristics at VDS = 2 V of a FeFET device based on a ferroelectric PZT gate oxide. (b) Endurance tests by measuring the off- and on-state drain current at a fixed VDS = 2 V as a function of programming cycles of the ZnO nanowire-based FET devices.Back to article page