Table 2 Structural parameters of S1 and S2 samples obtained from the XRD and AFM data
From: Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
Sample | tGaN/tAlN(nm) | Rcurv.(m) | Npin.(×108 cm−2) | Ncr.(×103 cm−1) | Lter.(nm) | |
|---|---|---|---|---|---|---|
Nominal | Actual | |||||
S1 | 1.98/1.98 | 1.70 ± 0.07/2.30 ± 0.06 | 4 | 0.86 | 1.5 | 300 |
S2 | 1.98/1.98 | 1.50 ± 0.04/2.50 ± 0.05 | 10 | 1.8 | None | 900 |