Table 1 Lattice parameter and strain and stress of AZO thin films evaluated from XRD patterns
From: Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering
Efficiency of NIR (%) | I (002) | d hkl (Ǻ) | c (Ǻ) | ϵ (%) | σfilm (GPa) |
|---|---|---|---|---|---|
20 | 1,225 | 2.63455 | 5.2691 | 1.3302 | −3.0993 |
40 | 1,684 | 2.6308 | 5.2616 | 1.1862 | −2.7638 |
60 | 1,692 | 2.62335 | 5.2467 | 0.8985 | −2.0936 |
80 | 1,823 | 2.6196 | 5.2392 | 0.7554 | −1.7601 |